P1086 vishay siliconix document number: 70259 s-04030?rev. e, 04-jun-01 www.vishay.com 9-1 p-channel jfet
v gs(off) max (v) r ds(on) max ( ) i d(off) typ (pa) t on typ (ns) 10 75 ?10 25
low on-resistance?<75 fast switching?t on : 25 ns high off-isolation?i d(off) : ?10 pa low capacitance: 5 pf low insertion loss low error voltage high-speed analog circuit performance negligible ?off-error,? excellent accuracy good frequency response eliminates additional buffering analog switches choppers sample-and-hold normally ?on? switches current limiters the P1086 is a p-channel analog switch designed to provide low on-resistance and fast switching. this device is optimized for use in complementary switching applications with the vishay siliconix j/sst111 series. the P1086 device is available in various lead forms and tape-and-reel for automated assembly (see packaging information). to-226aa (to-92) top view s g d 1 2 3
gate-drain voltage 30 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate-source voltage 30 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current ?50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c
P1086 vishay siliconix www.vishay.com 9-2 document number: 70259 s-04030 ? rev. e, 04-jun-01
limits parameter symbol test conditions min typ a max unit static gate-source breakdown voltage v (br)gss i g = 1 a , v ds = 0 v 30 45 gate-source cutoff voltage v gs(off) v ds = ? 15 v, i d = ? 1 a 10 v saturation drain current b i dss v ds = ? 20 v, v gs = 0 v ? 10 ma v gs = 15 v, v ds = 0 v 0.01 2 gate reverse current i gss t a = 85 c 0.6 gate operating current i g v dg = ? 15 v, i d = ? 1 ma 0.01 na v gs = 12 v ? 0.01 drain cutoff current i d(off) v ds = ? 15 v v gs = 7 v ? 0.01 ? 10 t a = 85 c ? 0.001 ? 0.5 a drain-source on-resistance r ds(on) v gs = 0 v, i d = ? 1 ma 75 gate-source forward voltage v gs(f) v ds = 0 v, i g = ? 1 ma ? 0.7 v dynamic common-source forward transconductance g fs v ds = ? 15 v, i d = ? 1 ma 4.5 ms common-source output conductance g os v ds = ? 15 v, i d = ? 1 ma f = 1 khz 20 s drain-source on-resistance r ds(on) v gs = 0 v, i d = 0 ma , f = 1 khz 75 common-source input capacitance c iss v ds = ? 15 v, v gs = 0 v f = 1 mhz 20 45 common-source reverse transfer capacitance c rss v ds = 0 v, v gs = 10 v, f = 1 mhz 5 10 pf equivalent input noise voltage e n v dg = ? 10 v, i d = ? 1 ma f = 1 khz 20 nv ? hz switching t d(on) 10 15 turn-on time t r v gs(l) = 0 v, v gs(h) = 10 v 15 20 t d(off) v gs(l) = 0 v, v gs(h) = 10 v see switching circuit 10 15 ns turn-off time t f 20 50 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. pscia b. pulse test: pw 300 s duty cycle 3%.
P1086 vishay siliconix document number: 70259 s-04030 ? rev. e, 04-jun-01 www.vishay.com 9-3 200 06810 4 2 160 0 ? 100 ? 80 ? 60 ? 40 ? 20 0 on-resistance and drain current vs. gate-source cutoff voltage v gs(off) ? gate-source cutoff voltage (v) r ds @ i d = ? 1 ma, v gs = 0 v i dss @ v ds = ? 15 v, v gs = 0 v i dss r ds 120 80 40 18 0 15 12 9 6 3 6810 2 250 200 150 100 50 0 forward transconductance and output conductance vs. gate-source cutoff voltage v gs(off) ? gate-source cutoff voltage (v) g fs and g os @ v ds = ? 15 v v gs = 0 v, f = 1 khz g fs g os 4 output characteristics ? drain current (ma) i d v ds ? drain-source voltage (v) 1.0 v 0.5 v 1.5 v 2.0 v ? 25 0 ? 12 ? 16 ? 20 ? 20 ? 15 ? 10 ? 5 0 ? 8 ? 4 v gs(off) = 3 v v gs = 0 v output characteristics ? drain current (ma) i d v ds ? drain-source voltage (v) 1.5 v 2.0 v ? 2 0 ? 0.3 ? 0.4 ? 0.5 ? 1.6 ? 1.2 ? 0.8 ? 0.4 0 ? 0.2 ? 0.1 v gs(off) = 3 v v gs = 0 v 250 200 150 100 50 0 ? 1 ? 10 ? 100 on-resistance vs. drain current i d ? drain current (ma) t a = 25 c v gs(off) = 1.5 v 3 v 5 v 300 ? 55 25 125 0 ? 15 85 on-resistance vs. temperature t a ? temperature ( c) v gs(off) = 1.5 v 3 v 5 v i d = ? 1 ma r ds changes x 0.7%/ c 240 180 120 60 ? 35 5 45 65 105 0.5 v 1.0 v s) g os ? output conductance ( r ds(on) ? drain-source on-resistance ( ? ) i dss ? saturation drain current (ma) g fs ? forward transconductance (ms) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? )
P1086 vishay siliconix www.vishay.com 9-4 document number: 70259 s-04030 ? rev. e, 04-jun-01 20 0 ? 9 ? 12 ? 6 ? 3 ? 15 16 12 8 4 0 turn-on switching turn-off switching v gs(off) ? gate-source cutoff voltage (v) i d ? drain current (ma) t r approximately independent of i d v dd = ? 10 v, r g = 220 v gs(h) = 10 v, v gs(l) = 0 v t on @ i d = ? 10 ma t d(off) v gs(off) = 1.5 v t f v gs(off) = 1.5 v t on @ i d = ? 5 ma v dd = ? 10 v, v gs(h) = 10 v, v gs(l) = 0 v 50 05 40 20 10 0 30 1234 t r @ i d = ? 5 ma 5 v 5 v switching time (ns) switching time (ns) capacitance vs. gate-source voltage gate leakage current capacitance (pf) v gs ? gate-source voltage (v) v dg ? drain-gate voltage (v) v ds = 0 v f = 1 mhz c iss c rss t a = 125 c t a = 25 c ? 10 ma 10 na 100 pa 100 na 1 na ? gate leakage i g 10 pa 1 pa 0.1 pa 30 01216 820 24 12 6 0 0 ? 40 ? 20 ? 10 ? 50 18 4 ? 30 i gss @ 125 c i gss @ 25 c i d = ? 10 ma 10 100 1 k 100 k 10 k 100 10 1 transfer characteristics noise voltage vs. frequency f ? frequency (hz) v ds = ? 15 v t a = ? 55 c 125 c v ds = ? 10 v i d = ? 0.1 ma ? 1 ma ? drain current (ma) i d v gs ? gate-source voltage (v) ? 40 0345 ? 32 ? 16 ? 8 0 ? 24 12 v gs(off) = 3 v ? 1 ma 25 c e n ? noise voltage nv / hz ? 1 ma
P1086 vishay siliconix document number: 70259 s-04030 ? rev. e, 04-jun-01 www.vishay.com 9-5
v dd ? 6 v v gg 12 v r l * 1800 r g * 220 i d(on) ? 3 ma *non-inductive input pulse sampling scope rise time < 1 ns rise time 0.4 ns fall time < 1 ns input resistance 10 m pulse width 100 ns input capacitance 1.5 pf prf 1 mhz 7.5 k 51 1.2 k 51 51 1.2 k 0.1 mf sampling scope v gg v dd r g v gs(h) v gs(l) r l
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